带GaAsSb通道的p- hfet

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79849

J. Tantillo, P. Cook, K. Evans, M.J. Martinez, R. Bobb, E. Martinez, C. E. Stutz, F. Schuermeyer

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引用次数: 1

摘要

本文描述了GaAs衬底上伪晶GaAsSb/AlGaAs p- hfet(异质结构FET) FET特性的初步结果。给出并讨论了漏极电流与漏极电压、栅极电流与栅极电压、跨导以及漏极电流与栅极电压的平方根的曲线。这些数据证实了由于价带不连续性增加而导致栅极特性的改善。由于采用了嵌入式栅极工艺和相对较低的引脚电压，该器件显示出较大的源电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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p-HFETs with GaAsSb channel

The initial results on the FET characteristics of pseudomorphic GaAsSb/AlGaAs p-HFETs (heterostructure FETs) on GaAs substrates are described. Curves showing the drain current versus drain voltage, gate current versus gate voltage, transconductance, and square root of drain current versus gate voltage are shown and discussed. The data confirm the improvement in gate characteristics due to an increased valence band discontinuity. The devices showed a large source resistance due to the recessed gate process utilized and the relatively low pinch-off voltage.<>

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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