基于16至19 GHz锁相环的完全解耦LC槽压控振荡器,采用130nm SiGe BiCMOS,在10MHz偏移时实现- 131dBc/Hz相位噪声

B. Sadhu, S. Reynolds
{"title":"基于16至19 GHz锁相环的完全解耦LC槽压控振荡器,采用130nm SiGe BiCMOS,在10MHz偏移时实现- 131dBc/Hz相位噪声","authors":"B. Sadhu, S. Reynolds","doi":"10.1109/CSICS.2017.8240451","DOIUrl":null,"url":null,"abstract":"This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation. As proof of concept, a VCO operating at 16 to 19 GHz is implemented in the IBM 130nm SiGe BiCMOS technology fT/fmax of 200/280 GHz). The VCO achieves a phase noise of −131dBc/Hz at a 10MHz offset from the carrier.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"2004 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A fully decoupled LC tank VCO based 16 to 19 GHz PLL in 130nm SiGe BiCMOS achieving −131dBc/Hz phase noise at 10MHz offset\",\"authors\":\"B. Sadhu, S. Reynolds\",\"doi\":\"10.1109/CSICS.2017.8240451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation. As proof of concept, a VCO operating at 16 to 19 GHz is implemented in the IBM 130nm SiGe BiCMOS technology fT/fmax of 200/280 GHz). The VCO achieves a phase noise of −131dBc/Hz at a 10MHz offset from the carrier.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"2004 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文描述了一种通过电路拓扑降低振荡器相位噪声的技术,该电路拓扑将LC槽与有源器件解耦,从而实现不受有源器件击穿电压限制的更高幅度的振荡。这种完全解耦的LC储罐拓扑结构还减少了注入储罐的噪声,再加上储罐的摆动幅度较大,从而实现了低相位噪声的运行。作为概念验证,在IBM 130纳米SiGe BiCMOS技术(fT/fmax为200/280 GHz)中实现了工作在16至19 GHz的VCO。在距离载波10MHz的偏移处,VCO实现了−131dBc/Hz的相位噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A fully decoupled LC tank VCO based 16 to 19 GHz PLL in 130nm SiGe BiCMOS achieving −131dBc/Hz phase noise at 10MHz offset
This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation. As proof of concept, a VCO operating at 16 to 19 GHz is implemented in the IBM 130nm SiGe BiCMOS technology fT/fmax of 200/280 GHz). The VCO achieves a phase noise of −131dBc/Hz at a 10MHz offset from the carrier.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信