{"title":"基于16至19 GHz锁相环的完全解耦LC槽压控振荡器,采用130nm SiGe BiCMOS,在10MHz偏移时实现- 131dBc/Hz相位噪声","authors":"B. Sadhu, S. Reynolds","doi":"10.1109/CSICS.2017.8240451","DOIUrl":null,"url":null,"abstract":"This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation. As proof of concept, a VCO operating at 16 to 19 GHz is implemented in the IBM 130nm SiGe BiCMOS technology fT/fmax of 200/280 GHz). The VCO achieves a phase noise of −131dBc/Hz at a 10MHz offset from the carrier.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"2004 11","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A fully decoupled LC tank VCO based 16 to 19 GHz PLL in 130nm SiGe BiCMOS achieving −131dBc/Hz phase noise at 10MHz offset\",\"authors\":\"B. Sadhu, S. Reynolds\",\"doi\":\"10.1109/CSICS.2017.8240451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation. As proof of concept, a VCO operating at 16 to 19 GHz is implemented in the IBM 130nm SiGe BiCMOS technology fT/fmax of 200/280 GHz). The VCO achieves a phase noise of −131dBc/Hz at a 10MHz offset from the carrier.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"2004 11\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A fully decoupled LC tank VCO based 16 to 19 GHz PLL in 130nm SiGe BiCMOS achieving −131dBc/Hz phase noise at 10MHz offset
This paper describes a technique for reducing oscillator phase noise through a circuit topology that decouples the LC tank from the active devices, achieving a higher amplitude of oscillation not limited by the active device breakdown voltage. This fully decoupled LC tank topology also reduces noise injection into the tank, which, coupled with the higher tank swing, results in low phase noise operation. As proof of concept, a VCO operating at 16 to 19 GHz is implemented in the IBM 130nm SiGe BiCMOS technology fT/fmax of 200/280 GHz). The VCO achieves a phase noise of −131dBc/Hz at a 10MHz offset from the carrier.