针对大脑皮层的高清晰度经颅直流刺激装置

G. Sharma, R. Raj, S. R. Chowdhury
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引用次数: 0

摘要

非侵入性脑刺激(NIBS)装置作为神经调节剂逐渐被使用,在点护理医疗技术领域显示出乐观的潜力。本研究的主要目的是开发一种原型装置,通过选择弱直流电强度来增加或减少神经元的兴奋性,从而帮助改善各种神经系统疾病。传统的高清晰度经颅直流电刺激(HD-tDCS)装置主要依赖于三个因素,即高清晰度电极的小尺寸、多电极配置以及弱直流电在主动电极和返回电极上的优化分布。提出的原型HD-tDCS装置主要集中在装置的内部电路上,考虑到所选的配置,它可以为有源电极和回极提供精确的直流分布。本文设计的HD-tDCS装置提供1.00mA ~ 4.00mA的弱直流电,输出直流电的测量误差为+0.06mA ~ 0.06mA。理论值与实测值之间的误差小于2%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Definition Transcranial Direct Current Stimulation Device for Targeting Cerebral Cortex
Non-invasive brain stimulation (NIBS) devices are progressively used as neuromodulator and are showing optimistic potential in the field of point care medical technology. The main aim of this study is to develop a prototype device, which helps in improving various neurological disorders, by increasing or decreasing neuronal excitability, depending upon the selection of a weak intensity of direct current. Conventionally, high definition transcranial direct current stimulation (HD-tDCS) device mainly depends upon three factors, viz, small size of high definition electrodes, multi-electrode configurations and optimized distribution of weak direct currents to the active and return electrodes. The proposed prototype HD-tDCS device is mainly focused on the internal circuit of the device, which provides precise distribution of direct current to both active and return electrodes, considering selected configurations. In this paper, HD-tDCS device has been designed which provides a weak direct current in the range of 1.00mA to 4.00mA with a measured error of +0.06mA to 0.06mA in the output direct currents. The % error between the theoretical and the measured values is less than 2%.
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