SRAM单元的稳定性和软错误率

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1984.1156666

B. Chappell, S. Schuster, G. Sai-Halasz

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引用次数: 4

摘要

图形技术分析器件尺寸，阈值跟踪，负载电阻值和其他设计参数对sram的稳定性和软错误率的影响，并通过对高速64K RAM的应用进行说明。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Stability and soft error rates of SRAM cells

Graphical techniques for analyzing the impact of device sizes, threshold tracking, load resistor values and other design parameters on the stability and soft error rate of SRAMs, illustrated via applicat)ons to a high-speed 64K RAM, will be presented.

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来源期刊

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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