基于忆阻器的新型非易失D锁存器和触发器设计

Zhenxing Chang, Aijiao Cui, Ziming Wang, G. Qu
{"title":"基于忆阻器的新型非易失D锁存器和触发器设计","authors":"Zhenxing Chang, Aijiao Cui, Ziming Wang, G. Qu","doi":"10.1109/ISQED51717.2021.9424269","DOIUrl":null,"url":null,"abstract":"Sequential devices are the fundamental building blocks for almost all digital electronic systems with memory. Due to the importance of instant data recovery after unexpected data loss such as unplanned power down, sequential devices need to have the nonvolatile property, which motivates the recent research and practice in integrating the nonvolatile memristor into CMOS devices. In this paper, we study how to apply this approach to improve the quality of nonvolatile D latch. Unlike the structure of conventional design, the proposed D latch consists of only one memristor, several transmission gates, and CMOS inverters. Our design overcomes the negative effect due to the threshold loss of the transistors. As simulation shows, compared with the current designs, our proposed memristor-based D latch can support the memristor to switch between different resistance states 2.3X-3.6X faster, and thus achieving a clock of higher frequency. In addition, our design allows the threshold value of the memristor to be selected from a much wider range. As an application, we use the proposed memristor-based D latch to implement a nonvolatile master-slave D flip-flop, which has smaller delay than all the state-of the-art designs and smaller area than all but one of them. Our designs improve the quality of memristor-based D latch and D flip-flop in terms of latency, area, and flexibility of threshold voltage selection, making them a promising option for data backup in real life systems.","PeriodicalId":123018,"journal":{"name":"2021 22nd International Symposium on Quality Electronic Design (ISQED)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Novel Memristor-based Nonvolatile D Latch and Flip-flop Designs\",\"authors\":\"Zhenxing Chang, Aijiao Cui, Ziming Wang, G. Qu\",\"doi\":\"10.1109/ISQED51717.2021.9424269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Sequential devices are the fundamental building blocks for almost all digital electronic systems with memory. Due to the importance of instant data recovery after unexpected data loss such as unplanned power down, sequential devices need to have the nonvolatile property, which motivates the recent research and practice in integrating the nonvolatile memristor into CMOS devices. In this paper, we study how to apply this approach to improve the quality of nonvolatile D latch. Unlike the structure of conventional design, the proposed D latch consists of only one memristor, several transmission gates, and CMOS inverters. Our design overcomes the negative effect due to the threshold loss of the transistors. As simulation shows, compared with the current designs, our proposed memristor-based D latch can support the memristor to switch between different resistance states 2.3X-3.6X faster, and thus achieving a clock of higher frequency. In addition, our design allows the threshold value of the memristor to be selected from a much wider range. As an application, we use the proposed memristor-based D latch to implement a nonvolatile master-slave D flip-flop, which has smaller delay than all the state-of the-art designs and smaller area than all but one of them. Our designs improve the quality of memristor-based D latch and D flip-flop in terms of latency, area, and flexibility of threshold voltage selection, making them a promising option for data backup in real life systems.\",\"PeriodicalId\":123018,\"journal\":{\"name\":\"2021 22nd International Symposium on Quality Electronic Design (ISQED)\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 22nd International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED51717.2021.9424269\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 22nd International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED51717.2021.9424269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

顺序器件是几乎所有具有存储器的数字电子系统的基本组成部分。由于意外断电等意外数据丢失后数据的即时恢复的重要性,顺序器件需要具有非易失性,这促使了近年来将非易失性忆阻器集成到CMOS器件中的研究和实践。在本文中,我们研究了如何应用这种方法来提高非易失D锁存器的质量。与传统设计的结构不同,所提出的D锁存器仅由一个忆阻器、几个传输门和CMOS逆变器组成。我们的设计克服了晶体管阈值损耗带来的负面影响。仿真结果表明,与现有设计相比,我们提出的基于忆阻器的D锁存器可以支持忆阻器在不同电阻状态之间切换的速度提高2.3 -3.6倍,从而实现更高频率的时钟。此外,我们的设计允许在更宽的范围内选择忆阻器的阈值。作为一个应用,我们使用所提出的基于忆阻器的D锁存器来实现一个非易失性主从D触发器,它比所有最先进的设计具有更小的延迟和更小的面积。我们的设计在延迟、面积和阈值电压选择的灵活性方面提高了基于忆阻器的D锁存器和D触发器的质量,使它们成为现实生活系统中数据备份的有希望的选择。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Memristor-based Nonvolatile D Latch and Flip-flop Designs
Sequential devices are the fundamental building blocks for almost all digital electronic systems with memory. Due to the importance of instant data recovery after unexpected data loss such as unplanned power down, sequential devices need to have the nonvolatile property, which motivates the recent research and practice in integrating the nonvolatile memristor into CMOS devices. In this paper, we study how to apply this approach to improve the quality of nonvolatile D latch. Unlike the structure of conventional design, the proposed D latch consists of only one memristor, several transmission gates, and CMOS inverters. Our design overcomes the negative effect due to the threshold loss of the transistors. As simulation shows, compared with the current designs, our proposed memristor-based D latch can support the memristor to switch between different resistance states 2.3X-3.6X faster, and thus achieving a clock of higher frequency. In addition, our design allows the threshold value of the memristor to be selected from a much wider range. As an application, we use the proposed memristor-based D latch to implement a nonvolatile master-slave D flip-flop, which has smaller delay than all the state-of the-art designs and smaller area than all but one of them. Our designs improve the quality of memristor-based D latch and D flip-flop in terms of latency, area, and flexibility of threshold voltage selection, making them a promising option for data backup in real life systems.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信