嵌入SiO/ sub2 /基体的硅纳米晶体强红光发射

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) Pub Date : 2002-12-11 DOI:10.1109/COMMAD.2002.1237243

W. Chen, Y. Wang, C. Chen, H. Diao, X. Liao, G. Kong, C. Hsu

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引用次数: 1

摘要

在本研究中，采用传统的等离子体增强化学气相沉积(PECVD)和高温退火技术，在SiO/ sub2 /基体中嵌入硅纳米晶体。利用傅里叶变换红外光谱、微拉曼光谱、高分辨率透射电镜和x射线光电子能谱等实验技术研究了硅纳米晶体的形成、光学和微观结构性质。在室温下，观察到硅纳米晶体发出很强的红光。结果表明，发光强度与衬底温度、氧含量和退火温度有较强的相关性。当衬底温度从250 /spl℃降至RT时，发光强度增加两个数量级。

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Strong red light emission from silicon nanocrystals embedded in SiO/sub 2/ matrix

In this study, silicon nanocrystals embedded in SiO/sub 2/ matrix were formed by conventional plasma enhanced chemical vapor deposition (PECVD) followed by high temperature annealing. The formation of silicon nanocrystals (nc-Si), their optical and micro-structural properties were studied using various experimental techniques, including Fourier transform infrared spectroscopy, micro-Raman spectra, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy. Very strong red light emission from silicon nanocrystals at room temperature (RT) was observed. It was found that there is a strong correlation between the PL intensity and the substrate temperature, the oxygen content and the annealing temperature. When the substrate temperature decreases from 250 /spl deg/C to RT, the PL intensity increases by two orders of magnitude.

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2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)

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