调制和条纹速度对Bi12SiO20中移动光栅光折变响应的影响

G. Brost, K. Magde, C. Cartwright, W. Gillespie, Zhao-qi Wang
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引用次数: 0

摘要

在直流电场中,通过移动干涉模式记录全息图可以大大增强长漂移长度晶体的光折变效应,如半导体和硅晶。Refregier等人的理论预测了光折变响应,但仅在小调制的限制下。在实践中,大多数实验条件不能用线性化理论来充分描述。Refregier等人1使用的校正函数描述了调制的影响,但仅适用于最佳速度下的两波混频。Au和Solymar2在数值上表现出复杂的光折变响应。在本文中,我们提供了更详细的数值分析,并首次提供了BSO中光折变响应的实验表征,包括衍射和能量传递,作为调制指数和条纹速度的函数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of modulation and fringe velocity on the photorefractive response with moving gratings in Bi12SiO20
Hologram recording by a moving interference pattern in a dc-electric field can provide large enhancements in the photorefractive effect in crystals with long drift lengths, such as semiconductors and the sillenites. The theory of Refregier et al.1 predicts the photorefractive response, but only in the limit of small modulation. In practice, most experimental conditions cannot be adequately described by the linearized theory. The correction function used by Refregier et al.1 describes the effect of modulation, but only for two-wave mixing at the optimum velocity. Au and Solymar2 have demonstrated numerically a complicated photorefractive response. In this paper we provide more detailed numerical analysis, and for the first time, experimental characterization of the photorefractive response, including both diffraction and energy transfer, in BSO as function of modulation index and fringe velocity.
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