一种200 μ v /e的CMOS图像传感器，具有100克满阱容量

2007 IEEE Symposium on VLSI Circuits Pub Date : 2007-06-14 DOI:10.1109/VLSIC.2007.4342690

S. Adachi, Woonghee Lee, N. Akahane, H. Oshikubo, K. Mizobuchi, S. Sugawa

{"title":"一种200 μ v /e的CMOS图像传感器，具有100克满阱容量","authors":"S. Adachi, Woonghee Lee, N. Akahane, H. Oshikubo, K. Mizobuchi, S. Sugawa","doi":"10.1109/VLSIC.2007.4342690","DOIUrl":null,"url":null,"abstract":"A high sensitivity CMOS image sensor without the dynamic range (DR) trade-off has been developed by implementing the small floating diffusion (FD) capacitance in the lateral overflow integration capacitor (CS) embedded pixel circuit. A 1/4-inch VGA chip fabricated through 0.18-μm 2P3M process achieves 200-μV/e- conversion gain with 100-ke- full well capacity, 2.2-e-rms noise floor and 93-dB DR. The S/N ratio degradation at the detection node switch from FD to FD+CS is not visible.","PeriodicalId":261092,"journal":{"name":"2007 IEEE Symposium on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 200-μV/e- CMOS image sensor with 100-ke- full well capaclty\",\"authors\":\"S. Adachi, Woonghee Lee, N. Akahane, H. Oshikubo, K. Mizobuchi, S. Sugawa\",\"doi\":\"10.1109/VLSIC.2007.4342690\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high sensitivity CMOS image sensor without the dynamic range (DR) trade-off has been developed by implementing the small floating diffusion (FD) capacitance in the lateral overflow integration capacitor (CS) embedded pixel circuit. A 1/4-inch VGA chip fabricated through 0.18-μm 2P3M process achieves 200-μV/e- conversion gain with 100-ke- full well capacity, 2.2-e-rms noise floor and 93-dB DR. The S/N ratio degradation at the detection node switch from FD to FD+CS is not visible.\",\"PeriodicalId\":261092,\"journal\":{\"name\":\"2007 IEEE Symposium on VLSI Circuits\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2007.4342690\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2007.4342690","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

通过在横向溢出集成电容(CS)嵌入式像素电路中实现小浮动扩散(FD)电容，开发了一种无动态范围(DR)折衷的高灵敏度CMOS图像传感器。采用0.18 μm 2P3M工艺制作的1/4英寸VGA芯片，转换增益为200 μ v /e，满井容量为100 μ v /e，本底噪声为2.2 e-rms, dr为93 db，检测节点从FD切换到FD+CS时信噪比下降不明显。

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A 200-μV/e- CMOS image sensor with 100-ke- full well capaclty

A high sensitivity CMOS image sensor without the dynamic range (DR) trade-off has been developed by implementing the small floating diffusion (FD) capacitance in the lateral overflow integration capacitor (CS) embedded pixel circuit. A 1/4-inch VGA chip fabricated through 0.18-μm 2P3M process achieves 200-μV/e- conversion gain with 100-ke- full well capacity, 2.2-e-rms noise floor and 93-dB DR. The S/N ratio degradation at the detection node switch from FD to FD+CS is not visible.

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2007 IEEE Symposium on VLSI Circuits

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