{"title":"0.25 μm SiGe BiCMOS 30GHz平衡矢量调制器","authors":"F. Tabarani, H. Schumacher","doi":"10.1109/SIRF.2016.7445478","DOIUrl":null,"url":null,"abstract":"Vector modulators are a key component in phased array antennas and communications systems. The paper describes a novel design methodology for a bi-directional, reflection-type balanced vector modulator using metal-oxide-semiconductor field-effect (MOS) transistors as active loads, which provides an improved constellation quality. The fabricated IC occupies 787 × 1325 μm2 and exhibits a minimum transmission loss of 9 dB and return losses better than 14 dB. As an application example, its use in a 16-QAM modulator is verified.","PeriodicalId":138697,"journal":{"name":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"0.25 μm SiGe BiCMOS 30GHz balanced vector modulator\",\"authors\":\"F. Tabarani, H. Schumacher\",\"doi\":\"10.1109/SIRF.2016.7445478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vector modulators are a key component in phased array antennas and communications systems. The paper describes a novel design methodology for a bi-directional, reflection-type balanced vector modulator using metal-oxide-semiconductor field-effect (MOS) transistors as active loads, which provides an improved constellation quality. The fabricated IC occupies 787 × 1325 μm2 and exhibits a minimum transmission loss of 9 dB and return losses better than 14 dB. As an application example, its use in a 16-QAM modulator is verified.\",\"PeriodicalId\":138697,\"journal\":{\"name\":\"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2016.7445478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2016.7445478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Vector modulators are a key component in phased array antennas and communications systems. The paper describes a novel design methodology for a bi-directional, reflection-type balanced vector modulator using metal-oxide-semiconductor field-effect (MOS) transistors as active loads, which provides an improved constellation quality. The fabricated IC occupies 787 × 1325 μm2 and exhibits a minimum transmission loss of 9 dB and return losses better than 14 dB. As an application example, its use in a 16-QAM modulator is verified.