TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM电池的设计

2015 45th European Solid State Device Research Conference (ESSDERC) Pub Date : 2015-11-12 DOI:10.1109/ESSDERC.2015.7324764

C. Y. Chen, L. Goux, A. Fantini, R. Degraeve, A. Redolfi, G. Groeseneken, M. Jurczak

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引用次数: 1

摘要

在本文中，我们设计了一个TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf氧化物电阻随机存取存储器(OxRRAM)器件，用于在低工作电流下快速切换而不牺牲保持和持久性能。集成的40nm × 40nm电池在10μA下使用短于100ns的写入脉冲开关。1 . us)为RESET(响应。SET)，且振幅< 2V。在验证算法中使用这些条件，可以可靠地获得x10的电阻窗口，与最先进的OxRRAM堆栈相比，写入速度降低了10倍以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current

In this paper we engineer a TiN\Al₂O₃\(Hf, Al)O₂\Ta₂O₅\Hf Oxide Resistive Random Access Memory (OxRRAM) device for fast switching at low operation current without sacrificing the retention and endurance properties. The integrated 40nm × 40nm cell switches at 10μA using write pulses shorter than 100ns (resp. 1us) for RESET (resp. SET) and with amplitude <;2V. Using these conditions in a verify algorithm, a resistive window of x10 is reliably obtained, decreasing the write speed by more than 1 decade compared to state-of-the-art OxRRAM stacks.

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2015 45th European Solid State Device Research Conference (ESSDERC)

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