用于移动应用的单芯片CMOS超高频RFID阅读器收发器

Le Ye, H. Liao, Fei Song, Jiang Chen, Congyin Shi, Chen Li, Junhua Liu, Ru Huang, Jinshu Zhao, Huiling Xiao, Ruiqiang Liu, Xin'an Wang
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引用次数: 0

摘要

介绍了一种符合中国标准(840 ~ 925 MHz)的UHF RFID读写器收发器,满足EPC Class-1 Gen-2和ISO/IEC 18000-6C协议。为了抑制从发射机到接收机的大型自干扰,提出了片上自干扰抵消(SC)电路和具有快速时变截止频率的全集成直流偏移抵消(DCOC)电路,可在15µs内消除自干扰。此外,提出了电容交叉耦合(CCC)共门输入级和垂直NPN BJT开关级的混频器,以实现高线性度(- 8 dBm P1dB),良好的宽带匹配和低1/f噪声角。该发射机集成了一个22dbm输出功率、35% PAE的CMOS ab类放大器,适用于移动应用,支持DSB/SSB/PR-ASK调制方案,ACPR1为- 45 dBc, ACPR2为- 60 dBc,满足中国本土严格的频谱掩模要求。还实现了具有单LC压控振荡器的sigma-delta锁相环,用于250 kHz信道跳频和良好的相位噪声(在1MHz偏移时为- 126 dBc/Hz)。在20dbm PA输出功率下,接收器的灵敏度低至- 77dbm。该单片机采用标准的0.18µm CMOS工艺实现。它占用13.5 mm2的硅面积,在1.8V电源电压下消耗113 mA(无PA)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A single-chip CMOS UHF RFID Reader transceiver for mobile applications
A UHF RFID Reader Transceiver for China standard (840∼925 MHz) as well as meeting the protocols of EPC Class-1 Gen-2 and ISO/IEC 18000–6C is presented. To suppress the large self-jammer from transmitter to receiver, an on-chip self-jammer cancellation (SC) circuits and a fully-integrated DC-offset Cancellation (DCOC) circuits with quickly time-varying cut-off frequency are proposed to kill the self-jammer within 15 µs. Furthermore, a mixer with capacitor cross-coupled (CCC) common-gate input stage and vertical NPN BJT switching stage is proposed to achieve high linearity (−8 dBm P1dB), good wideband matching and low 1/f noise corner. The transmitter integrated with a CMOS class-AB PA of 22 dBm output power in linear mode with 35% PAE, which is suitable for mobile applications, supports the DSB/SSB/PR-ASK modulation schemes and achieves ACPR1 of −45 dBc and ACPR2 of −60 dBc, which satisfies the stringent spectral mask of China local requirements. A sigma-delta PLL with a single LC VCO is also implemented for 250 kHz channel hopping and good phase noise (−126 dBc/Hz at 1MHz offset). The receiver has a sensitivity of down to −77 dBm in the presence of 20 dBm PA output power. The single-chip is implemented in standard 0.18 µm CMOS process. It occupies 13.5 mm2 silicon areas, and consumes 113 mA (without PA) from 1.8V supply voltage.
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