{"title":"用于太赫兹应用的110-150 GHz siw -矩形波导转换","authors":"Jia Wang, Z. Hao, Kuikui Fan","doi":"10.1109/IMWS-AMP.2016.7588309","DOIUrl":null,"url":null,"abstract":"In this paper, a D-band fin-line SIW-WR6 waveguide transition is investigated by using the low-cost printed-circuit-board (PCB) technology. Full-wave simulations have been used to synthesize and optimize the proposed transition. In order to evaluate effectively the loss of the transition, three different lengths of transitions are designed and measured. Measurement results show that from 110 GHz to 150 GHz, the average insertion loss of the proposed terahertz transition is around 0.54 dB, and its return loss is better than 10 dB. This work demonstrates that the proposed SIW-WR6 waveguide transition can be used for developing future planar terahertz components by using low cost PCB process.","PeriodicalId":132755,"journal":{"name":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"211 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 110–150 GHz SIW-rectangular waveguide transition for terahertz applications\",\"authors\":\"Jia Wang, Z. Hao, Kuikui Fan\",\"doi\":\"10.1109/IMWS-AMP.2016.7588309\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a D-band fin-line SIW-WR6 waveguide transition is investigated by using the low-cost printed-circuit-board (PCB) technology. Full-wave simulations have been used to synthesize and optimize the proposed transition. In order to evaluate effectively the loss of the transition, three different lengths of transitions are designed and measured. Measurement results show that from 110 GHz to 150 GHz, the average insertion loss of the proposed terahertz transition is around 0.54 dB, and its return loss is better than 10 dB. This work demonstrates that the proposed SIW-WR6 waveguide transition can be used for developing future planar terahertz components by using low cost PCB process.\",\"PeriodicalId\":132755,\"journal\":{\"name\":\"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"volume\":\"211 5\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMWS-AMP.2016.7588309\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2016.7588309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 110–150 GHz SIW-rectangular waveguide transition for terahertz applications
In this paper, a D-band fin-line SIW-WR6 waveguide transition is investigated by using the low-cost printed-circuit-board (PCB) technology. Full-wave simulations have been used to synthesize and optimize the proposed transition. In order to evaluate effectively the loss of the transition, three different lengths of transitions are designed and measured. Measurement results show that from 110 GHz to 150 GHz, the average insertion loss of the proposed terahertz transition is around 0.54 dB, and its return loss is better than 10 dB. This work demonstrates that the proposed SIW-WR6 waveguide transition can be used for developing future planar terahertz components by using low cost PCB process.