基于hemt的MMIC单平衡混频器，用于60ghz室内通信系统

15th Annual GaAs IC Symposium Pub Date : 1993-10-10 DOI:10.1109/GAAS.1993.394500

T. Saito, N. Hidaka, Y. Ohashi, T. Shimura, Y. Aoki

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引用次数: 10

摘要

作者开发了单平衡配置的v波段单片有源门和有源漏混频器。两个有源混频器中的hemt都具有AlGaAs/GaAs结构，栅极长0.15 /spl μ m，宽100 /spl μ m。单平衡有源门混频器的最大转换增益为-4.3 dB，在60 ghz时只有2.5 dBm的LO驱动。门混频器在58 GHz和0 dBm LO驱动功率下的噪声系数为5.3 dB。单平衡有源漏极混频器的最大转换增益为-6 dB，在60 GHz时具有13.5 dBm的LO驱动。漏极混频器在58 GHz和8.5 dBm LO驱动下的噪声系数为6.8 dB。比较了在同一晶片上制备的有源栅和有源漏混合器的射频性能。

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HEMT-based MMIC single-balanced mixers for 60-GHz indoor communication systems

The authors developed V-band monolithic active-gate and active-drain mixers with a single-balance configuration. The HEMTs in both active mixers have an AlGaAs/GaAs structure and gates 0.15 /spl mu/m long and 100 /spl mu/m wide. The single-balanced active-gate mixer has a maximum conversion gain of -4.3 dB and only 2.5 dBm LO drive at 60-GHz. The gate mixer has a noise figure of 5.3 dB at 58 GHz and 0 dBm LO drive power. The single-balanced active-drain mixer has a maximum conversion gain of -6 dB and 13.5 dBm LO drive at 60 GHz. The drain mixer has a noise figure of 6.8 dB at 58 GHz and 8.5 dBm LO drive. The RF performances of active-gate and active-drain mixers fabricated on the same wafer are compared.<>

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来源期刊

15th Annual GaAs IC Symposium

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