超低电压标准电池库在65纳米CMOS工艺技术

Joseph Leandro B. Peje, Hani Herbert L. Ho, Floro Barot, Maria Fe G. Bautista, Carl Christian E. Misagal, J. Hizon, L. Alarcón
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引用次数: 7

摘要

本文讨论了一种超低电压标准电池库的设计。这包括在原理图级别上设计每个栅极的设计约束以及设计布局时使用的技术。讨论了对标准单元库进行时序和功率表征的方法,以及如何生成逻辑和物理库文件。然后通过使用几个测试电路验证标准细胞库的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An ultra low-voltage standard cell library in 65-nm CMOS process technology
In this paper, the design of an ultra-low voltage standard cell library is discussed. This includes the design constraints in designing each gate on a schematic level as well as techniques used in designing the layout. The method of performing timing and power characterization of the standard cell library and how the logical and physical library files are generated are discussed. The accuracy of the standard cell library is then verified through the use of several test circuits.
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