一种0.3 μA无静态电流输出电容的动态摆率增强缓冲LDO

Tianxiang Wu, Yuting Zhang, Yanhan Zeng
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引用次数: 0

摘要

本文提出了一种采用180nm标准CMOS技术实现的低静态电流、快速瞬态响应输出的无电容LDO。提出了一种带暂态尖峰检测的动态摆率增强缓冲器,以改善负载的暂态响应。此外,采用增益增强晶体管的低功率ab类放大器,保持高环路增益,具有良好的稳压性能。仿真结果表明,LDO的静态电流仅为283nA。同时,当负载电流从1 mA到15 mA,边缘时间为300 ns,输出电容为0-pF时,瞬态纹波仅为141.9 mV。线路稳压仅为0.305 mV/V,负载稳压仅为17.79 $\mu \mathbf{V/mA}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.3-μA Quiescent Current Output Capacitor-Less LDO with Dynamic Slew Rate Enhance Buffer
This paper presents a low quiescent current, fast transient response output capacitor-less LDO implemented in a 180nm standard CMOS technology. A dynamic slew rate enhance buffer with transient spike detecting is proposed to improve the load transient response. Besides, a low power class-AB amplifier with gain enhance transistors is used to keep high loop gain for good regulated performance. According to the simulation result, the quiescent current of the LDO is only 283nA. Meanwhile, when the load current steps from 1 mA to 15 mA with a 300-ns edge time and a 0-pF output capacitor, the transient ripple is only 141.9 mV. Besides, the line regulation is only 0.305 mV/V and the load regulation is only 17.79 $\mu \mathbf{V/mA}$.
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