光学、电子束和x射线光刻在0.2-/spl mu/m区域以下的关键尺寸控制分析

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520866

H. Fukuda, S. Okazaki

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引用次数: 0

摘要

分析了光刻、电子束光刻和x射线光刻的临界尺寸控制。在0.1 ~ 0.2-/spl mu/m范围内，化学物质在抗蚀剂薄膜中的扩散和掩膜边缘精度等加工因素占主导地位。这使得即使采用后光刻方法，也难以在充分的CD控制下实现这种规模。

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Analysis of critical dimension control for optical-, EB-, and X-ray lithography below the 0.2-/spl mu/m region

Critical dimension (CD) control for optical-, EB-, and X-ray lithography is analyzed. In the 0.1 to 0.2-/spl mu/m region, processing factors such as diffusion of chemical species in resist films and mask edge accuracy become dominant. These make it difficult to achieve this scale with sufficient CD control even with post-optical lithography methods.

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1995 Symposium on VLSI Technology. Digest of Technical Papers

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