{"title":"千兆互补het通信电路:16:1复用器,1:16解复用器和16/spl倍/16交叉点开关","authors":"G. la Rue, T.A. Dao","doi":"10.1109/ISSCC.1996.488537","DOIUrl":null,"url":null,"abstract":"Three high-speed, low-power integrated circuits are intended for data communication applications in space. A 16:1 multiplexer (1.8 Gb/s, 53 mW), 1:16 demultiplexer (1.1 Gbps/96 mW) and 16/spl times/16 crosspoint switch (1.0 Gb/s, 510 mW) circuits are fabricated using a 0.7 /spl mu/m complementary heterojunction field effect transistor (CHFET) process with cut-off frequencies of about 30 GHz for n-channel and about 6 GHz for p-channel transistors.","PeriodicalId":162539,"journal":{"name":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Gigabit complementary HFET communication circuits: 16:1 multiplexer, 1:16 demultiplexer and 16/spl times/16 crosspoint switch\",\"authors\":\"G. la Rue, T.A. Dao\",\"doi\":\"10.1109/ISSCC.1996.488537\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three high-speed, low-power integrated circuits are intended for data communication applications in space. A 16:1 multiplexer (1.8 Gb/s, 53 mW), 1:16 demultiplexer (1.1 Gbps/96 mW) and 16/spl times/16 crosspoint switch (1.0 Gb/s, 510 mW) circuits are fabricated using a 0.7 /spl mu/m complementary heterojunction field effect transistor (CHFET) process with cut-off frequencies of about 30 GHz for n-channel and about 6 GHz for p-channel transistors.\",\"PeriodicalId\":162539,\"journal\":{\"name\":\"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-02-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1996.488537\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1996.488537","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gigabit complementary HFET communication circuits: 16:1 multiplexer, 1:16 demultiplexer and 16/spl times/16 crosspoint switch
Three high-speed, low-power integrated circuits are intended for data communication applications in space. A 16:1 multiplexer (1.8 Gb/s, 53 mW), 1:16 demultiplexer (1.1 Gbps/96 mW) and 16/spl times/16 crosspoint switch (1.0 Gb/s, 510 mW) circuits are fabricated using a 0.7 /spl mu/m complementary heterojunction field effect transistor (CHFET) process with cut-off frequencies of about 30 GHz for n-channel and about 6 GHz for p-channel transistors.