LC-tank VCO中的单事件瞬变

The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology Pub Date : 2012-04-19 DOI:10.1109/MMWCST.2012.6238178

Yuanlin Gao, J. Lou, Jun Zhang, Lei Li, F. Xu

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引用次数: 8

摘要

研究了LC-tank VCO对单事件瞬态(SET)的响应。载波频率为1.56 GHz时，1mhz偏移处的相位噪声为-117 dBc/Hz。电路级仿真结果表明，离子对关键晶体管的冲击会引起振荡输出的畸变。通过在偏置电路中增加放电路径和去耦电阻，一种新的设计强化辐射(RHBD)方法被证明是缓解SET对压控振荡器影响的有效方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single-event transients in LC-tank VCO

The responses of a LC-tank VCO to single-event transients (SET) are investigated. The phase noise at 1 MHz offset is -117 dBc/Hz at the carrier frequency of 1.56 GHz. The circuit-level simulation results indicate that ion strikes on critical transistors cause distortions in the oscillating output. A new radiation hardened by design (RHBD) method, adding a discharge path and a decoupling resistor to the bias circuit, is demonstrated to be an effective way to mitigate the effect of SET to the VCO.

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The 2012 International Workshop on Microwave and Millimeter Wave Circuits and System Technology

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