采用0.18µm CMOS工艺的并联电阻反馈超宽带低噪声放大器

A. Galal, R. Pokharel, Haruichi Kanay, K. Yoshida
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引用次数: 28

摘要

介绍了一种用于超宽带系统的CMOS低噪声放大器(LNA)。该LNA采用电阻性并联反馈拓扑结构,实现了3 ~ 10.6 GHz的宽工作带宽。设计了两级放大器和级间电路以实现更宽的增益带宽。在输入和输出级采用并联电阻反馈,提供低噪声系数的宽带输入匹配。本工作采用TSMC 0.18µm CMOS工艺设计制作。所提出的UWB LNA在整个频段内实现了15 dB的测量平坦增益和4 dB的噪声系数,同时消耗21.5 mW的功率。测量到的三阶截距点IIP3为2.5 dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-wideband low noise amplifier with shunt resistive feedback in 0.18µm CMOS process
A CMOS low noise amplifier (LNA) for ultra-wideband (UWB) systems is presented. The proposed LNA achieve wide operating bandwidth for 3–10.6 GHz by using resistive shunt feedback topology. Two stage amplifiers and an inter stage circuit are designed to achieve wider gain bandwidth. The shunt resistive feedback are employed in input and output stage to provide wideband input matching with low noise figure (NF). This work is designed and fabricated in TSMC 0.18µm CMOS process. The proposed UWB LNA achieves a measured flat gain 15 dB and has a noise figure of 4 dB over the entire band while consuming 21.5 mW of power. The measured third order intercept point IIP3 is 2.5 dBm.
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