溶液加工电子学用新型无机材料

D. Talapin, D. Mitzi, E. Shevchenko, A. Alivisatos, Christopher Murray
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摘要

虽然传统的晶体无机半导体提供优越的载流子迁移率,但它们通常难以通过低成本工艺形成。无机半导体的结晶需要高温处理,这需要在器件性能、成本和与塑料基板的兼容性之间进行权衡。从显示器、光伏电池和发光设备到“智能卡”、射频标签和传感器等应用的发展,可以通过引入成本更低的替代传统硅技术来加速。基于解决方案的工艺,如旋转涂层、浸渍涂层或喷墨印刷,为电子和光电器件的制造提供了大量的成本降低。我们提供了几种新方法的概述溶液处理无机半导体。胶体半导体纳米晶体使室温溶液型场效应器件[1]的制造成为可能。我们制作了9nm PbSe纳米晶体自组装形成的薄膜晶体管通道(图1)。纳米晶体与肼交联增加了交换耦合,使薄膜电导率提高了约10个数量级,产生了带电载流子迁移率为1 cm2/Vs的n型器件。在纳米晶体表面吸附非p型掺杂分子后,纳米晶体阵列中np型输运和p型输运之间的可逆切换成为可能(图1d)。在200°C下对掺杂纳米晶体阵列进行退火,载流子迁移率提高了约一个数量级。8 nm PbTe纳米晶体[2]阵列的电子迁移率为11 cm2/Vs。多功能纳米颗粒构建块的自组装为设计结合半导体、金属和磁性成分特性的复合材料提供了一种强大的模块化方法(图2)。我们证明了这些材料可以用于溶液处理电子和光电子器件。液相胶体合成允许纳米材料的工程尺寸、形状和组成。各种各样的半导体可以制备成纳米球体、纳米棒、纳米圆盘、四足体、纳米线和纳米片。其中一些结构对于超小型电子设备来说很有趣。例如,图3显示了一个基于CdTe四足体的单电子晶体管,其臂直径为8nm,长度为150nm[5]。另一种有前途的溶液处理半导体方法是基于使用分子前体,在高温下加热后转化为结晶无机半导体。一种新型廉价的高迁移率无机硫族化合物的可溶前驱体被开发出来。例如,自旋涂覆的In2Se3薄膜的电子迁移率高达16 cm2/Vs(图4)[6]。水溶性肼基前体可以合成一系列具有良好电子、热电和光伏性能的材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel inorganic materials for solution-processed electronics
While conventional crystalline inorganic semiconductors offer superior charge carrier mobilities, they are generally difficult to form by low cost processes. Crystallization of inorganic semiconductors requires high-temperature treatments that force trade-offs between device performance, cost and compatibility with plastic substrates. The development of applications ranging from displays, photovoltaic cells and light-emitting devices to "smart cards", radio frequency tags and sensors could be accelerated by introducing lower cost alternatives to conventional silicon technology. Solution-based processes such as spin coating, dip coating or inkjet printing offer substantial cost reductions for fabrication of electronic and optoelectronic devices. We provide an overview of several new approaches to solution-processed inorganic semiconductors. Colloidal semiconductor nanocrystals enable room temperature solution-based fabrication of field-effect devices [1]. We fabricated thin-film transistor channels formed by self-assembly of 9 nm PbSe nanocrystals (Figure 1). Cross-linking of the nanocrystals with hydrazine increased exchange coupling, raising film conductance by about 10 orders of magnitude, yielding n-type device with charge-carrier mobility of 1 cm2/Vs. Reversible switching between nand p-type transport in nanocrystal arrays is possible upon adsorption of nor p-type doping molecules on nanocrystal surface (Figure 1d). Annealing of doped nanocrystal arrays at 200°C increased carrier mobility by about an order of magnitude. Electron mobility of 11 cm2/Vs was observed for arrays of 8 nm PbTe nanocrystals [2]. Self-assembly of multifunctional nanoparticle building blocks provides a powerful modular approach to the design of composite materials that combine properties of semiconducting, metallic and magnetic constituents (Figure 2) [3]. We demonstrate that these materials can be employed for solution-processed electronic and optoelectronic devices. Liquid-phase colloidal synthesis allows engineering size, shape and composition of nanomaterials. Various semiconductors can be prepared in form of nanoscale spheres, rods, discs, tetrapods, nanowires and nanorings. Some of these structures are interesting for ultra-small electronic devices. For example, Figure 3 shows a single electron transistor based on a CdTe tetrapod with arms 8 nm in diameter and 150 nm in length [5]. Another promising approach to solution-processed semiconductors is based on using molecular precursors that transform into crystalline inorganic semiconductors upon heating at elevated temperatures. A novel class of inexpensive soluble precursors for high-mobility inorganic chalcogenides has been developed [4]. For example, spin-coated films of In2Se3 exhibited electron mobilities as high as 16 cm2/Vs (Figure 4) [6]. Soluble hydrazine-based precursors can be synthesized for a range of materials with promising electronic, thermoelectric, and photovoltaic properties.
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