电磁场作用下键合厚度对集成电路稳定性的影响

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003. Pub Date : 1900-01-01 DOI:10.1109/CRMICO.2003.158959

V. Starostenko, Ye.V. Grygoriev, Ye.P. Taran, A. V. Rukavishnikov

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引用次数: 0

摘要

介绍了在脉冲电磁场作用下根据键合厚度(深度)计算集成电路稳定性的方法。得到了非均匀键合深度对下降电磁波电场强度阈值影响的数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of bonding thickness on stability of integrated circuits at effect of electromagnetic fields

The technique of numerical calculation of stability integrated circuits is adduced depending on thickness (depth) of bonding at effect of pulse electromagnetic fields. The data on influencing depth of inhomogeneous bonding on threshold values of an electric field strength of a dropping electromagnetic wave are obtained.

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来源期刊

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003.

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