用确定性BTE求解器模拟纳米级双栅In0.53Ga0.47As nmosfet

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480516

S. Di, K. Zhao, Zhiyuan Lun Tiao Lu, G. Du, Xiaoyan Liu

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引用次数: 2

摘要

通过确定性地求解时变玻尔兹曼输运方程(BTE)，模拟了纳米级双栅In0.53Ga0.47As nMOSFET器件结构。结果表明，即使r谷和L谷之间的能隙很大，L谷的贡献也不容忽视。此外，尽管存在散射，但仍观察到准弹道输运。

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Simulation of nano-scale double gate In0.53Ga0.47As nMOSFETs by a deterministic BTE solver

A nano-scale double gate In0.53Ga0.47As nMOSFET device structure is simulated by deterministically solving the time dependent Boltzmann Transport Equation (BTE). The results show that the contribution of the L valleys cannot be ignored even if the energy gap between r and L valleys are very large. Moreover, the quasi-ballistic transport is observed despite the existence of scattering.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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