新一代CMP设备及其对IC器件的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785815

R. R. Jin

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引用次数: 2

摘要

本文将接收并报告新一代CMP设备(MIRRA(R))的发展进展，用于不同的CMP在IC制造中的应用:SOI，硅/多晶硅，浅沟槽隔离(STI)，氧化物(PMD和ILD)， W, Cu, Al。新一代CMP设备对IC器件制造及其性能的影响也进行了讨论。

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New generation CMP equipment and its Impact on IC devices

This paper will receive and report advancements in new generation CMP equipment (MIRRA(R)) development for different CMP applications in IC fabrication: SOI, silicon/polysilicon, shallow trench isolation (STI), oxide (PMD and ILD), W, Cu, Al. The impact of new generation CMP equipment on IC device fabrication and its performance is also discussed.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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