在铝电极上覆盖镍/金后,将单壁碳纳米管与CMOS IC集成

Jung-Tang Huang, Kai-Yuan Jenq, Po-Chin Lin, Hou-Jun Hsu, T. Tsai, Ching-Kong Chen
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引用次数: 0

摘要

本文介绍了采用台积电0.35µm CMOS工艺制造的CMOS集成电路芯片上单壁碳纳米管(SWNT)电极间的互连。采用交流介电泳力(AC-DEP)方法制备微电极,使单壁碳纳米管在电极间沉积。使用化学镍和浸泡金覆盖铝电极,当电极之间连接单壁碳纳米管时,电流确实增加了3个以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The integration of SWNTs with CMOS IC after covering Nickel/Gold on the Aluminum electrodes
This paper presents the interconnection of single -walled carbon nanotube (SWNT) between electrodes on a CMOS integrated circuit chip made by TSMC 0.35µm CMOS process. Alternating current dielectrophoretic force (AC-DEP) method is employed to micro-electrode that makes SWNTs deposited between electrodes. Using Electroless Nickel and Immersion Gold to cover the electrodes of Al could really increase the current more than 3 orders when SWNTs are connected between electrodes.
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