电可变8192位n通道MOS PROM

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1977.1155651

R. Muller, H. Nietsch, B. Rossler, E. Wolter

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引用次数: 1

摘要

近年来，人们对采用浮栅原理的优异信息保留的电可擦除MOS PROM越来越感兴趣。n通道earom的几种建议是已知的。本文将描述一个8192位n通道EAROM，其特点是:a)单晶体管单元，b)标准工作电压和用于编程和擦除的单高压脉冲，c)， 24引脚封装，d)兼容读取和编程的输入/输出TTL, e)静态，不需要时钟，低待机功率。

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Electrically alterable 8192 bit N-channel MOS PROM

THERE HAS BEEN an increasing interest in recent years in an electrically erasable MOS PROM employing the excellent information retention of the floating gate principle’. Several proposals for N-channel EAROMs are known’ >3. This paper will describe an 8192-bit N-channel EAROM featuring: a ) single transistor cell, b) standard operating voltages and single high voltage pulse for programming and erasure, c), 24-pin package, d) input/output TTL compatible for read and programming, e ) static, no clock required, and fl low standby power.

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来源期刊

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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