四种电荷注入源下AlGaN/GaN肖特基门hemt单事件瞬态的比较

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2017-10-01 DOI:10.1109/RADECS.2017.8696147

A. Khachatrian, N. Roche, S. Buchner, A. Koehler, T. Anderson, K. Hobart, D. McMorrow, S. Lalumondiere, N. Wells, M. Tockstein, E. C. Dillingham, J. Bonsall, P. Karuza, W. Lotshaw, S. Moss, D. Brewe, V. Ferlet-Cavrois, M. Mushitiello

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引用次数: 1

摘要

比较了重离子、聚焦脉冲激光和聚焦脉冲x射线在AlGaN/GaN HEMT中产生的单事件瞬态的形状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of Single Event Transients in AlGaN/GaN Schottky-Gate HEMTs Using Four Sources for Charge Injection

The shapes of single-event transients produced by heavy ions, focused pulsed laser-light, and focused pulsed x-rays in an AlGaN/GaN HEMT were compared.

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来源期刊

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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