锶-铋-钽酸盐电容器在SOI晶圆上集成的影响

2005 IEEE International SOI Conference Proceedings Pub Date : 2006-07-24 DOI:10.1109/AERO.2006.1655955

V. Joshi, M. Ohno, J. Ida, Y. Nagatomo, K. Strauss

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引用次数: 0

摘要

我们首次报道了在SOI衬底上成功集成锶-铋-钽酸铁电电容器。我们已经验证了SBT电容器独特的加工要求不会影响周围FD-SOI晶体管的性能，相反，我们已经验证了SOI处理不会影响SBT电容器的质量。

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The effect of integration of strontium-bismuth-tantalate capacitors onto SOI wafers

We report for the first time the successful integration of strontium-bismuth-tantalate ferroelectric capacitors on an SOI substrate. We have verified that the unique processing requirements of SBT capacitors do not affect the properties of the surrounding FD-SOI transistors, and, conversely, we have verified that the SOI processing does not affect the quality of the SBT capacitors.

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2005 IEEE International SOI Conference Proceedings

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