用于低压操作的13T抗辐射SRAM位单元

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) Pub Date : 2013-10-01 DOI:10.1109/S3S.2013.6716579

L. Atias, A. Teman, A. Fish

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引用次数: 5

摘要

本文提出了一种用于超低功耗工作的抗辐射低压存储单元。所提出的13T位电池采用标准的0.18μm CMOS工艺实现，通过双驱动内部自校正机制，可以承受高达500 fC的电荷沉积。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 13T radiation hardened SRAM bitcell for low-voltage operation

In this work, a radiation hardened low-voltage memory cell for ultra-low power operation is proposed. The proposed 13T bitcell is implemented in a standard 0.18μm CMOS process and is shown to tolerate upsets with charge deposits as high as 500 fC through a dual-driven internal self-correction mechanism.

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来源期刊

2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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