堆叠顺序对整体3D芯片到晶圆堆叠ic成本的影响

M. Taouil, S. Hamdioui
{"title":"堆叠顺序对整体3D芯片到晶圆堆叠ic成本的影响","authors":"M. Taouil, S. Hamdioui","doi":"10.1109/DDECS.2011.5783107","DOIUrl":null,"url":null,"abstract":"Three-dimensional Stacked IC (3D-SIC) is a promising technology gaining a lot of attention by industry. Such technology promises lower latency, lower power consumption and a smaller footprint as compared to planar ICs. Reducing the overall 3D-SIC manufacturing cost is a major challenge driving the industry. The process of stacking the dies together is an integral part of 3D-SIC manufacturing process; hence, it impacts the overall cost. This paper introduces out-of-order stacking and compares it with the conventional in-order stacking from cost point of view. In-order stacking restricts the stacking of the dies in a bottom-up sequential order, while out-of-order stacking poses no restrictions and the order is free as long as it is realistic. The simulation results show that out-of-order stacking ends up in lower cost than in-order stacking, and that the difference increases for larger stack sizes and lower stacking yield. For example, our case study shows that for a 3D-SIC with a stack size of 6 layers, out-of-order stacking outperforms the in-order one with up to 6% using the optimal test flow.","PeriodicalId":231389,"journal":{"name":"14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Stacking order impact on overall 3D die-to-wafer Stacked-IC cost\",\"authors\":\"M. Taouil, S. Hamdioui\",\"doi\":\"10.1109/DDECS.2011.5783107\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional Stacked IC (3D-SIC) is a promising technology gaining a lot of attention by industry. Such technology promises lower latency, lower power consumption and a smaller footprint as compared to planar ICs. Reducing the overall 3D-SIC manufacturing cost is a major challenge driving the industry. The process of stacking the dies together is an integral part of 3D-SIC manufacturing process; hence, it impacts the overall cost. This paper introduces out-of-order stacking and compares it with the conventional in-order stacking from cost point of view. In-order stacking restricts the stacking of the dies in a bottom-up sequential order, while out-of-order stacking poses no restrictions and the order is free as long as it is realistic. The simulation results show that out-of-order stacking ends up in lower cost than in-order stacking, and that the difference increases for larger stack sizes and lower stacking yield. For example, our case study shows that for a 3D-SIC with a stack size of 6 layers, out-of-order stacking outperforms the in-order one with up to 6% using the optimal test flow.\",\"PeriodicalId\":231389,\"journal\":{\"name\":\"14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DDECS.2011.5783107\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2011.5783107","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

三维堆叠集成电路(3D-SIC)是一项很有前途的技术,受到业界的广泛关注。与平面集成电路相比,这种技术承诺更低的延迟、更低的功耗和更小的占地面积。降低整体3D-SIC制造成本是推动行业发展的主要挑战。将模具堆叠在一起的过程是3D-SIC制造过程中不可或缺的一部分;因此,它会影响总体成本。本文介绍了乱序叠加,并从成本的角度对其与常规有序叠加进行了比较。有序堆叠限制了骰子自下而上的顺序堆叠,乱序堆叠没有限制,只要是现实的顺序是自由的。仿真结果表明,无序叠加的成本比有序叠加的成本低,且随着堆叠尺寸的增大和成材率的降低,两者之间的差异越来越大。例如,我们的案例研究表明,对于具有6层堆叠大小的3D-SIC,使用最佳测试流程,无序堆叠的性能优于有序堆叠,最高可达6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stacking order impact on overall 3D die-to-wafer Stacked-IC cost
Three-dimensional Stacked IC (3D-SIC) is a promising technology gaining a lot of attention by industry. Such technology promises lower latency, lower power consumption and a smaller footprint as compared to planar ICs. Reducing the overall 3D-SIC manufacturing cost is a major challenge driving the industry. The process of stacking the dies together is an integral part of 3D-SIC manufacturing process; hence, it impacts the overall cost. This paper introduces out-of-order stacking and compares it with the conventional in-order stacking from cost point of view. In-order stacking restricts the stacking of the dies in a bottom-up sequential order, while out-of-order stacking poses no restrictions and the order is free as long as it is realistic. The simulation results show that out-of-order stacking ends up in lower cost than in-order stacking, and that the difference increases for larger stack sizes and lower stacking yield. For example, our case study shows that for a 3D-SIC with a stack size of 6 layers, out-of-order stacking outperforms the in-order one with up to 6% using the optimal test flow.
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