用于gb级SPRAM及以上的高度可扩展的破坏性读取方案

R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno
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引用次数: 52

摘要

我们提出了一种高密度SPRAM的破坏性读取和恢复方案。该方案利用了TMR器件在特定的大电流脉冲周期内不改变其自由层磁化强度的特点,具有理想的误差率。执行恢复操作以保证数据的正常存储。因此,可以保持自旋传递扭矩写入的良好可扩展性,达到gb级及以上,实现无读取干扰的高速读取。此操作还可以使SPRAM接受DDRx-SDRAM兼容操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond
We propose a disruptive reading and restoring schemes for high-density SPRAM. The proposed scheme uses the feature that, with a desired error rate, TMR device doesn't switch its magnetization of free layer in a specific period of large current pulse. The restoring operation is performed to ensure the storing data. As a result, keeping the good scalability of spin-transfer torque writing toward Gb-scale and beyond, high speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation.
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