采用250nm InP DHBT技术的D和G频段平衡有源倍频器

Sona Carpenter, Z. He, H. Zirath
{"title":"采用250nm InP DHBT技术的D和G频段平衡有源倍频器","authors":"Sona Carpenter, Z. He, H. Zirath","doi":"10.1109/CSICS.2017.8240437","DOIUrl":null,"url":null,"abstract":"A wideband balanced active frequency doubler at Dband (110–170 GHz) and a frequency tripler at G-band (140–220 GHz) is presented. The circuits are implemented in a 250nm InP DHBT technology with ft/fmax 350/600 GHz respectively. The experimental results of the frequency doubler exhibit an output power of 4.2 dBm with 3-dB output bandwidth from 120 to 158 GHz corresponding to 27.3 % relative bandwidth. The power efficiency is 11.9 % at 124 GHz output and 5 dBm input power. The doubler chip consumes a dc-power of 19 mW and the chip dimension is 0.45 × 0.4 mm2. The tripler chip can provide output power of 3.8 dBm and has 3-dB output bandwidth of 27 GHz from 162–189 GHz. The balanced topology and band pass filter were utilized in tripler circuit for harmonic suppression. The fundamental- and second-harmonic suppressions are better than 20 dBc and 28 dBc, respectively. The dc power consumption is 26 mW. The chip surface is 0.9 × 0.4 mm2.","PeriodicalId":129729,"journal":{"name":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Balanced active frequency multipliers in D and G bands using 250nm InP DHBT technology\",\"authors\":\"Sona Carpenter, Z. He, H. Zirath\",\"doi\":\"10.1109/CSICS.2017.8240437\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A wideband balanced active frequency doubler at Dband (110–170 GHz) and a frequency tripler at G-band (140–220 GHz) is presented. The circuits are implemented in a 250nm InP DHBT technology with ft/fmax 350/600 GHz respectively. The experimental results of the frequency doubler exhibit an output power of 4.2 dBm with 3-dB output bandwidth from 120 to 158 GHz corresponding to 27.3 % relative bandwidth. The power efficiency is 11.9 % at 124 GHz output and 5 dBm input power. The doubler chip consumes a dc-power of 19 mW and the chip dimension is 0.45 × 0.4 mm2. The tripler chip can provide output power of 3.8 dBm and has 3-dB output bandwidth of 27 GHz from 162–189 GHz. The balanced topology and band pass filter were utilized in tripler circuit for harmonic suppression. The fundamental- and second-harmonic suppressions are better than 20 dBc and 28 dBc, respectively. The dc power consumption is 26 mW. The chip surface is 0.9 × 0.4 mm2.\",\"PeriodicalId\":129729,\"journal\":{\"name\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2017.8240437\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2017.8240437","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

提出了一种宽带平衡有源倍频器(110 ~ 170 GHz)和三倍频器(140 ~ 220 GHz)。电路采用250nm InP DHBT技术,ft/fmax分别为350/600 GHz。实验结果表明,该倍频器的输出功率为4.2 dBm, 3db输出带宽为120 ~ 158 GHz,相对带宽为27.3%。在124 GHz输出和5 dBm输入功率下,功率效率为11.9%。倍增芯片的直流功耗为19mw,芯片尺寸为0.45 × 0.4 mm2。该三倍器芯片的输出功率为3.8 dBm, 3db输出带宽为27ghz,范围为162-189 GHz。在三倍频电路中,采用平衡拓扑和带通滤波器进行谐波抑制。基频和二次谐波的抑制效果分别优于20 dBc和28 dBc。直流功耗为26mw。芯片表面为0.9 × 0.4 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Balanced active frequency multipliers in D and G bands using 250nm InP DHBT technology
A wideband balanced active frequency doubler at Dband (110–170 GHz) and a frequency tripler at G-band (140–220 GHz) is presented. The circuits are implemented in a 250nm InP DHBT technology with ft/fmax 350/600 GHz respectively. The experimental results of the frequency doubler exhibit an output power of 4.2 dBm with 3-dB output bandwidth from 120 to 158 GHz corresponding to 27.3 % relative bandwidth. The power efficiency is 11.9 % at 124 GHz output and 5 dBm input power. The doubler chip consumes a dc-power of 19 mW and the chip dimension is 0.45 × 0.4 mm2. The tripler chip can provide output power of 3.8 dBm and has 3-dB output bandwidth of 27 GHz from 162–189 GHz. The balanced topology and band pass filter were utilized in tripler circuit for harmonic suppression. The fundamental- and second-harmonic suppressions are better than 20 dBc and 28 dBc, respectively. The dc power consumption is 26 mW. The chip surface is 0.9 × 0.4 mm2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信