创建低q控制esr旁路电容器的一些选项概述

I. Novak, S. Pannala, J.R. Miller
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引用次数: 8

摘要

具有可控ESR的低q旁路电容器具有创建无谐振配电网络(PDN)的优势,对组件容差的灵敏度低,并且使用最少的组件数量实现可预测的阻抗曲线。低Q旁路电容器,称为旁路电阻,可以通过减小部件的电感和/或通过提高等效串联电阻(ESR)来创建。在多层电容器中,可以通过使用阻性极板和/或阻性端子,或通过在外部添加低电感的电阻来提高ESR。低电阻电容器板可以在高频电流环路外进行图案化。在薄膜电容器中,也可以通过减少电容器板的厚度来提高ESR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Overview of some options to create low-Q controlled-ESR bypass capacitors
Low-Q bypass capacitors with controlled ESR offer the advantage of creating resonance-free power distribution networks (PDN) with low sensitivity to component tolerances, and achieving a predictable impedance profile with the minimum number of components. Low Q bypass capacitors, termed bypass resistors, can be created either by reducing the inductance of the part, and/or by raising the equivalent series resistance (ESR). In multi-layer capacitors, ESR can be raised by using resistive plates, and/or resistive terminations, or by adding resistance externally with low inductance. Low-resistance capacitor plates can be patterned outside the high-frequency current loop. In thin-film capacitors, ESR can also be raised by reducing the thickness of capacitor plates.
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