{"title":"TSV的器件和电磁联合仿真:衬底噪声研究和矩阵中TSV的紧凑建模","authors":"P. L. Maitre, M. Brocard, A. Farcy, J. Marin","doi":"10.1109/ISQED.2012.6187525","DOIUrl":null,"url":null,"abstract":"This paper presents the results obtained from the simulation of TSV structures in face-to-back stacked dice. A novel simulation tool enabling device and electromagnetic (EM) co-simulation is used. We introduce a method to extract, from S-parameter simulation, a physics-based compact model of the TSV in a matrix and study the impact of layout variations on the TSV equivalent electrical model.","PeriodicalId":205874,"journal":{"name":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Device and electromagnetic co-simulation of TSV: Substrate noise study and compact modeling of a TSV in a matrix\",\"authors\":\"P. L. Maitre, M. Brocard, A. Farcy, J. Marin\",\"doi\":\"10.1109/ISQED.2012.6187525\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the results obtained from the simulation of TSV structures in face-to-back stacked dice. A novel simulation tool enabling device and electromagnetic (EM) co-simulation is used. We introduce a method to extract, from S-parameter simulation, a physics-based compact model of the TSV in a matrix and study the impact of layout variations on the TSV equivalent electrical model.\",\"PeriodicalId\":205874,\"journal\":{\"name\":\"Thirteenth International Symposium on Quality Electronic Design (ISQED)\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thirteenth International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2012.6187525\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thirteenth International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2012.6187525","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device and electromagnetic co-simulation of TSV: Substrate noise study and compact modeling of a TSV in a matrix
This paper presents the results obtained from the simulation of TSV structures in face-to-back stacked dice. A novel simulation tool enabling device and electromagnetic (EM) co-simulation is used. We introduce a method to extract, from S-parameter simulation, a physics-based compact model of the TSV in a matrix and study the impact of layout variations on the TSV equivalent electrical model.