提高可靠性的硅impt二极管

2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415) Pub Date : 2000-09-11 DOI:10.1109/CRMICO.2000.1255878

N.S. Boltovetes, V. V. Basanets, A.V. Ovar, A. Kurakin, E. F. Venger, R. Konakova, V. V. Milenin, E. Soloviev

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引用次数: 1

摘要

我们提出了我们的硅双漂移二极管的研究结果，用于毫米波长的范围。它们与n/sup +/-区域的欧姆接触是基于Pd/sub - 2/Si-Ti-Pd-Au金属化，而与p/sup +/-区域的欧姆接触是基于Pd/sub - 2/Si-TiN-Ti-Au金属化。在T=335、346和375/spl℃下进行的加速实验表明，这些IMPATT二极管降解过程的活化能为2.03 eV。失效后对二极管的分析表明，没有发生参数失效;失败的唯一机制是金属穿透了台地。

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Silicon IMPATT diodes of improved reliability

We present the results of our investigation of silicon double-drift diodes intended for the millimeter wavelength range. Their ohmic contacts to the n/sup +/-area were based on the Pd/sub 2/Si-Ti-Pd-Au metallization, while those to the p/sup +/-area were based on the Pd/sub 2/Si-TiN-Ti-Au metallization. The accelerated tests of these IMPATT diodes at T=335, 346 and 375/spl deg/C have shown that the activation energy of degradation processes was 2.03 eV. An analysis of the diodes after failure has shown that no parametric failures occurred; the only mechanism for failures was metal penetration through the mesa.

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2000 10th International Crimean Microwave Conference. "Microwave and Telecommunication Technology". Conference Proceedings (IEEE Cat. No.00EX415)

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