高密度SSRAM的辐射效应表征

2014 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2014-07-14 DOI:10.1109/REDW.2014.7004581

C. Hafer, J. Mabra, C. Mnich, M. Leslie, A. Jordan

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引用次数: 0

摘要

高密度64/80/96 mbit SSRAM已被设计、制造，并具有辐射效应特征。该器件具有SEL免疫，错误率小于1 × 10-15个错误/位天，TID耐受100 krad(Si)。

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Radiation Effects Characterization of a High Density SSRAM

A high density 64/80/96-Mbit SSRAM has been designed, manufactured, and characterized for radiation effects. The device is SEL immune, has an error rate less than 1x10-15 errors/bit-day, and is TID tolerant to 100 krad(Si).

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来源期刊

2014 IEEE Radiation Effects Data Workshop (REDW)

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