矩阵变换器中半导体损耗的解析建模

B. Wang, G. Venkataramanan
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引用次数: 30

摘要

在功率转换器的设计过程中,通常使用分析模型来估算半导体损耗。虽然这些模型已经建立并广泛应用于不同的DC-DC变换器、整流器和逆变器,但它们尚未用于矩阵变换器。因此,为了达到这个目的,我们不得不求助于数值模拟。尽管数值模拟是一种简单的方法,只要功率开关器件正确建模,它通常是耗时的,并且需要精确的器件物理模型。本文提出了一种分析表征传统矩阵变换器(CMC)和间接矩阵变换器(IMC)半导体损耗的方法。分析结果与详细数值模型在多种工况下的仿真结果进行了对比验证
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analytical Modeling of Semiconductor Losses in Matrix Converters
Analytical models for estimating semiconductor losses are commonly used for heatsink selection in the design process of power converters. While such models are established and widely known for different DC-DC converters, rectifiers and inverters, they have not been developed for matrix converters. Therefore, one has to resort to the use of numerical simulation for this purpose. Although numerical simulation is a straightforward approach as long as the power switching devices are properly modeled, it is typically time consuming and requires accurate physical models for the device. In this paper, an analytical approach to characterizing the semiconductor losses of the conventional matrix converter (CMC) and the indirect matrix converter (IMC) is presented. The analytical results are verified against the simulation results from a detailed numerical model under a wide variety of operating conditions
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