铜电迁移失效时间的双峰分布研究

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517) Pub Date : 2001-04-18 DOI:10.1109/VTSA.2001.934537

J. B. Lai, J.L. Yang, Y. Wang, S.H. Chang, R. Hwang, Y.S. Huang, C. Hou

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引用次数: 9

摘要

通过电迁移(EM)测试，在铜中经常看到失效时间(TTF)的双峰分布。应力试样的破坏机制可能与电磁测试的破坏时间有关。早期的故障与漏电有关，而后期的故障与金属条纹有关。讨论了失效机理。

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A study of bimodal distributions of time-to-failure of copper via electromigration

Bimodal distributions of time-to-failure (TTF) were often seen in copper via electromigration (EM) tests. The failure mechanism of the stressed samples could be correlated to time-to-failure of the EM test. Early-failures were via-related, whereas late-failures were metal-stripe-related. The failure mechanisms are discussed.

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来源期刊

2001 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers (Cat. No.01TH8517)

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