利用SIMOX三维雕刻技术在硅绝缘体上进行光电集成的地下光子学

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563585

T. Indukuri, P. Koonath, B. Jalali

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摘要

利用SIMOX三维雕刻工艺，可以在SOI晶圆上实现三维光电集成。在埋置硅层中制备了空载Q为8000、消光比>20 dB的微谐振器，并在表面硅层上采用图案化SIMOX工艺制备了MOS晶体管结构。

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Subterranean photonics using SIMOX 3-D sculpting for optoelectronic integration in silicon-on-insulator

Three-dimensional optoelectronic integration can be achieved in SOI wafers using the process of SIMOX 3D sculpting. Micro-resonators, with unloaded Q of 8000 and extinction ratio >20 dB, were fabricated in a buried silicon layer and MOS transistor structures were fabricated on the surface silicon layer using a patterned SIMOX process.

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2005 IEEE International SOI Conference Proceedings

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