III-V型化合物半导体与纳米级光栅阵列的低温直接晶圆键合

2015 International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2015-05-04 DOI:10.1109/ISNE.2015.7132038

Bai-Ci Chen, Yu-Chang Wu, Jen-Hung Huang, H. Kuo, C. Lin

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引用次数: 0

摘要

本文在硅片上设计了不同周期的光栅。将铝或二氧化硅填充在光栅的间隙中。测量了不同结构的表面反射率，并进行了理论计算。通过氧等离子体增强工艺，我们成功地实现了在硅片上直接键合InP外延层的低温工艺。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-temperature direct wafer bonding for III-V compound semiconductors to nanometer-scale grating arrays

In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial layers on a silicon wafer.

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2015 International Symposium on Next-Generation Electronics (ISNE)

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