基于电流模式方法的1.35 v非易失性存储器感测放大器

Proceedings of the 30th European Solid-State Circuits Conference Pub Date : 2004-11-15 DOI:10.1109/ESSCIR.2004.1356720

A. Conte, Gianbattista Lo Giudice, G. Palumbo, Alfredo Signorello

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引用次数: 4

摘要

提出了一种基于纯电流模式比较的新型拓扑结构的非易失性存储器感测放大器。该感测放大器能够在低至1 V的极低电压电源下工作，并在采用0.18 /spl mu/m EEPROM技术实现的EEPROM中实现。将电源设置为1.65 V，实验结果表明读访问时间约为30 ns。

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A 1.35-V sense amplifier for non volatile memories based on current mode approach

A sense amplifier for nonvolatile memories, based on a novel topology which has the benefit of a pure current mode comparison, is presented. The sense amplifier is capable of working under a very low voltage power supply - as low as 1 V, and was implemented in an EEPROM realized with a 0.18 /spl mu/m EEPROM technology. Setting the power supply at 1.65 V, experimental results shown a read access time of about 30 ns.

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Proceedings of the 30th European Solid-State Circuits Conference

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