不完全返回路径对RLCG模型的影响:传播延迟、上升时间和串扰预测

J. Legier, E. Paleczny, K. Bouazzati, D. Deschachi, F. Huret
{"title":"不完全返回路径对RLCG模型的影响:传播延迟、上升时间和串扰预测","authors":"J. Legier, E. Paleczny, K. Bouazzati, D. Deschachi, F. Huret","doi":"10.1109/SPI.2002.258279","DOIUrl":null,"url":null,"abstract":"If we take a look at the latest ITRS 2001 edition[1], we will realize the number and difficulties of technical challenges the semiconductor industry must solve. Traditional scaling which has been at the basis of the semi conductor industry during these last three decades is indeed beginning to show limits in CMOS planar process as well as in connecting each elementary active device. The new edition roadmap highlight the need of modeling lithography technology, deposition and etch variation across a wafer, and simulating gate stack and ultra shallow dopant distributions, and junctions. Extensive studies are also required in high frequency circuit modeling. Efficient simulation of full chip interconnect delay is also needed as well as 3D transmission line interconnect simulation.","PeriodicalId":290013,"journal":{"name":"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Imperfect Return Path Effects on RLCG Model of Single and Coupled Interconnects: Propagation delay, Rise Time and Crosstalk Prediction\",\"authors\":\"J. Legier, E. Paleczny, K. Bouazzati, D. Deschachi, F. Huret\",\"doi\":\"10.1109/SPI.2002.258279\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"If we take a look at the latest ITRS 2001 edition[1], we will realize the number and difficulties of technical challenges the semiconductor industry must solve. Traditional scaling which has been at the basis of the semi conductor industry during these last three decades is indeed beginning to show limits in CMOS planar process as well as in connecting each elementary active device. The new edition roadmap highlight the need of modeling lithography technology, deposition and etch variation across a wafer, and simulating gate stack and ultra shallow dopant distributions, and junctions. Extensive studies are also required in high frequency circuit modeling. Efficient simulation of full chip interconnect delay is also needed as well as 3D transmission line interconnect simulation.\",\"PeriodicalId\":290013,\"journal\":{\"name\":\"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI.2002.258279\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2002.258279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

如果我们看一下最新的ITRS 2001版[1],我们就会意识到半导体行业必须解决的技术挑战的数量和难度。在过去的三十年中,半导体工业的基础传统缩放确实开始在CMOS平面工艺以及连接每个基本有源器件方面显示出局限性。新版路线图强调需要建模光刻技术,沉积和蚀刻变化跨晶圆,模拟栅极堆栈和超浅掺杂分布,和结。在高频电路建模方面也需要进行广泛的研究。此外,还需要全芯片互连延迟的高效仿真以及传输线三维互连仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Imperfect Return Path Effects on RLCG Model of Single and Coupled Interconnects: Propagation delay, Rise Time and Crosstalk Prediction
If we take a look at the latest ITRS 2001 edition[1], we will realize the number and difficulties of technical challenges the semiconductor industry must solve. Traditional scaling which has been at the basis of the semi conductor industry during these last three decades is indeed beginning to show limits in CMOS planar process as well as in connecting each elementary active device. The new edition roadmap highlight the need of modeling lithography technology, deposition and etch variation across a wafer, and simulating gate stack and ultra shallow dopant distributions, and junctions. Extensive studies are also required in high frequency circuit modeling. Efficient simulation of full chip interconnect delay is also needed as well as 3D transmission line interconnect simulation.
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