Ge pmosfet的交流NBTI:能量交替缺陷对寿命预测的影响

2015 Symposium on VLSI Technology (VLSI Technology) Pub Date : 2015-06-16 DOI:10.1109/VLSIT.2015.7223692

J. Ma, W. Zhang, J. F. Zhang, Z. Ji, B. Benbakhti, J. Franco, J. Mitard, L. Witters, N. Collaert, G. Groeseneken

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引用次数: 5

摘要

本文首次研究了Si-cap/Ge和GeO2/Ge pmosfet的交流寿命，该寿命不能用传统的直流应力方法预测，且测量延迟。这是因为能量交流缺陷是在Ge器件中产生的，而不是在Si器件中产生的，这在直流应力下引入了额外的产生。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AC NBTI of Ge pMOSFETs: Impact of energy alternating defects on lifetime prediction

For the first time, AC lifetime in Si-cap/Ge and GeO2/Ge pMOSFETs is investigated and it must not be predicted by the conventional DC stress method with a measurement delay. This is because the energy alternating defects are generated in Ge devices but not in Si, which introduces additional generation under DC stress.

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2015 Symposium on VLSI Technology (VLSI Technology)

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