高压SiC器件:二极管和mosfet

2015 International Semiconductor Conference (CAS) Pub Date : 2015-12-17 DOI:10.1109/SMICND.2015.7355148

J. Millán, P. Friedrichs, A. Mihaila, V. Soler, J. Rebollo, V. Banu, P. Godignon

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引用次数: 12

摘要

本文综述了近年来针对风力发电和固态变压器应用的高压sic基器件的研究进展。设计并制作了电压范围为1.7kV ~ 9kV的SiC二极管。另一方面，SiC jfet，特别是SiC mosfet也在开发中，并报道了3.3 kV SiC mosfet的初步原型。

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High-voltage SiC devices: Diodes and MOSFETs

This paper reviews recent achievements on high-voltage SiC-based devices aimed at Wind Power and Solid-State Transformer applications. SiC diodes with voltage ranges between 1.7kV and 9kV have been designed and fabricated. On the other hand, SiC JFETs and, specially, SiC MOSFETs are also under development, and preliminary prototypes of 3.3 kV SiC MOSFETs are reported.

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2015 International Semiconductor Conference (CAS)

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