S. Zainabidinov, N. Turgunov, Sh. K. Akbarov, E. Berkinov, D.Kh. Mamazhonova
{"title":"氮硅样品中杂质原子的微感应体积分布","authors":"S. Zainabidinov, N. Turgunov, Sh. K. Akbarov, E. Berkinov, D.Kh. Mamazhonova","doi":"10.37681/2181-1652-019-x-2021-1-1","DOIUrl":null,"url":null,"abstract":"The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si\",\"authors\":\"S. Zainabidinov, N. Turgunov, Sh. K. Akbarov, E. Berkinov, D.Kh. Mamazhonova\",\"doi\":\"10.37681/2181-1652-019-x-2021-1-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.\",\"PeriodicalId\":153395,\"journal\":{\"name\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-02-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.37681/2181-1652-019-x-2021-1-1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-1-1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity microinclusions were obtained, and their chemical compositions were determined. The distribution o f Ni atoms and some technological impurities such as Fe and Cr over the volume o f multilayer microinclusions was revealed, according to which the maximum percentage o f impurity atoms is in its central part.
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