基于hfox的RRAM电性能和传导机制的温度依赖性研究

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839685

C. Ahn, Seyoung Kim, T. Gokmen, O. Dial, M. Ritter, H. Wong

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引用次数: 14

摘要

通过分析hfox基RRAM器件在350 ~ 40 K不同温度下的I-V特性，研究了hfox基RRAM的传导机理。发现RRAM的导电性强烈依赖于器件的电阻状态、电场和温度。在相对较高的电场(E > 3 MV/cm)下，普尔-弗伦克尔传导解释了我们在有限温度(T > 200 K)和偏置范围内测量到的温度依赖性，而陷阱辅助隧道则解释了温度不敏感传导机制(T <;结果表明，电阻越高的RRAM器件对温度的依赖性越弱。

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Temperature-dependent studies of the electrical properties and the conduction mechanism of HfOx-based RRAM

The conduction mechanism of HfOx-based RRAM is investigated by analyzing the I-V characteristics of HfOx-based RRAM devices at different temperatures ranging from 350 K down to 40 K. Electrical conduction of RRAM is found to be strongly dependent on the resistance state of the device, electric field, and temperature. At relatively high electric field (E > 3 MV/cm), Poole-Frenkel conduction explains our measured temperature dependence at limited temperature (T > 200 K) and bias ranges while trap-assisted tunneling accounts for the temperature-insensitive conduction regime (T <; 100 K). It is also concluded that the more resistive RRAM device shows weaker dependence on temperature.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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