电子光子学异构集成中光子元件线边缘粗糙度优化

Arvind Sundaram, Tew Ching Khang, Tan Guo Wei, Haitao Yu, B. C. Chandra Rao, Navab Singh
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引用次数: 0

摘要

本文旨在利用12英寸浸没光刻技术优化光子波导图样的线边缘粗糙度(LER)轮廓。为了简化实现,在不进行任何化学变化的情况下,通过改变照明光源轮廓和优化显影配方来调整LER。优化的照明设置和开发配方,提高了临界尺寸均匀性(CDU)≥97%,LER≤波导CD的5%。LER的主要改善是由于照明源轮廓从高部分相干性(高σ)环形,通常使用离轴照明来实现高分辨率,到低部分相干性(低σ)轴上。该优化条件适用于低损耗光子元件与电子器件的异质集成,可用于开发晶圆级光电系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Line Edge Roughness Optimization of Photonics Components in Electronics Photonics Heterogeneous Integration
This paper aims at optimizing the line edge roughness (LER) profile for photonics waveguide patterns using 12” immersion lithography. For simplicity of implementation, LER is tuned by varying the illumination source profile and optimizing development recipe without making any chemical changes. The optimized illumination setting and development recipe, delivered improved critical dimension uniformity (CDU) of ≥97% along with LER of ≤5% of waveguide CD. Major improvement in LER is obtained with the change in illumination source profile from high partial coherence (high-σ) annular, conventionally used off-axis illumination to achieve high resolution, to low partial coherence (low-σ) on-axis. The optimized conditions are suitable for heterogeneous integration of low loss photonics components with electronics for developing an opto-electronics system at wafer level.
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