一个全面的AC / DC NBTI模型:应力，恢复，频率，占空比和过程依赖

2013 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2013-04-14 DOI:10.1109/IRPS.2013.6532117

S. Desai, S. Mukhopadhyay, N. Goel, N. Nanaware, B. Jose, K. Joshi, S. Mahapatra

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引用次数: 52

摘要

提出了一个综合的NBTI框架，使用H/H2 RD模型来预测界面圈闭和2井模型来预测空穴圈闭，并将其用于预测直流和交流实验。根据不同的直流应力和恢复条件、交流频率和占空比、测量速度以及具有不同栅极绝缘子工艺的SiON和HKMG器件的实验数据验证了该框架。讨论了可选的两阶段模型框架的局限性。

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A comprehensive AC / DC NBTI model: Stress, recovery, frequency, duty cycle and process dependence

A comprehensive NBTI framework using the H/H2 RD model for interface traps and 2 well model for hole traps has been proposed and used to predict DC and AC experiments. The framework is validated against experimental data from different DC stress and recovery conditions, AC frequency and duty cycle, measurement speed, and across SiON and HKMG devices having different gate insulator processes. Limitations of the alternative 2 stage model framework is discussed.

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2013 IEEE International Reliability Physics Symposium (IRPS)

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