4H-SiC超结器件的解析模型

2006 CES/IEEE 5th International Power Electronics and Motion Control Conference Pub Date : 2006-08-01 DOI:10.1109/IPEMC.2006.4778178

L.C. Yu, K. Sheng

{"title":"4H-SiC超结器件的解析模型","authors":"L.C. Yu, K. Sheng","doi":"10.1109/IPEMC.2006.4778178","DOIUrl":null,"url":null,"abstract":"In this paper, for the first time, a new and easy-to-implement analytical model is developed for the breakdown voltage and specific on-resistance of 4H-SiC super-junction devices. The model features simple analytical equations while is still capable of predicting the device characteristics accurately for a large variety of device structural parameters. Accuracy of this model is verified by multi-dimensional numerical simulation","PeriodicalId":448315,"journal":{"name":"2006 CES/IEEE 5th International Power Electronics and Motion Control Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An Analytical Model for 4H-SiC Super-Junction Devices\",\"authors\":\"L.C. Yu, K. Sheng\",\"doi\":\"10.1109/IPEMC.2006.4778178\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, for the first time, a new and easy-to-implement analytical model is developed for the breakdown voltage and specific on-resistance of 4H-SiC super-junction devices. The model features simple analytical equations while is still capable of predicting the device characteristics accurately for a large variety of device structural parameters. Accuracy of this model is verified by multi-dimensional numerical simulation\",\"PeriodicalId\":448315,\"journal\":{\"name\":\"2006 CES/IEEE 5th International Power Electronics and Motion Control Conference\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 CES/IEEE 5th International Power Electronics and Motion Control Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPEMC.2006.4778178\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 CES/IEEE 5th International Power Electronics and Motion Control Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEMC.2006.4778178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文首次建立了一种新的易于实现的4H-SiC超结器件击穿电压和比导通电阻的分析模型。该模型具有简单的解析方程，同时仍然能够准确地预测各种器件结构参数的器件特性。通过多维数值仿真验证了该模型的准确性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Analytical Model for 4H-SiC Super-Junction Devices

In this paper, for the first time, a new and easy-to-implement analytical model is developed for the breakdown voltage and specific on-resistance of 4H-SiC super-junction devices. The model features simple analytical equations while is still capable of predicting the device characteristics accurately for a large variety of device structural parameters. Accuracy of this model is verified by multi-dimensional numerical simulation

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2006 CES/IEEE 5th International Power Electronics and Motion Control Conference

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