{"title":"一种用于视觉芯片的CMOS彩色像素","authors":"Qiuyu Fu, Wancheng Zhang, Qingyu Lin, N. Wu","doi":"10.1109/ICSENS.2009.5398508","DOIUrl":null,"url":null,"abstract":"This paper presents a novel CMOS color pixel with a 2D metal-grating structure for real-time vision chips. It consists of an N-well/P-substrate diode without salicide and 2D metal-grating layers on the diode. The periods of the 2D metal structure are controlled to realize color filtering. We implemented sixteen kinds of the pixels with the different metal-grating structures in a standard 0.18µm CMOS process. The measured results demonstrate that the N-well/P-substrate diode without salicide and with the 2D metal-grating structures can serve as the high speed RGB color active pixel sensor for real-time vision chips well.","PeriodicalId":262591,"journal":{"name":"2009 IEEE Sensors","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A novel CMOS color pixel for vision chips\",\"authors\":\"Qiuyu Fu, Wancheng Zhang, Qingyu Lin, N. Wu\",\"doi\":\"10.1109/ICSENS.2009.5398508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel CMOS color pixel with a 2D metal-grating structure for real-time vision chips. It consists of an N-well/P-substrate diode without salicide and 2D metal-grating layers on the diode. The periods of the 2D metal structure are controlled to realize color filtering. We implemented sixteen kinds of the pixels with the different metal-grating structures in a standard 0.18µm CMOS process. The measured results demonstrate that the N-well/P-substrate diode without salicide and with the 2D metal-grating structures can serve as the high speed RGB color active pixel sensor for real-time vision chips well.\",\"PeriodicalId\":262591,\"journal\":{\"name\":\"2009 IEEE Sensors\",\"volume\":\"158 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENS.2009.5398508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2009.5398508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a novel CMOS color pixel with a 2D metal-grating structure for real-time vision chips. It consists of an N-well/P-substrate diode without salicide and 2D metal-grating layers on the diode. The periods of the 2D metal structure are controlled to realize color filtering. We implemented sixteen kinds of the pixels with the different metal-grating structures in a standard 0.18µm CMOS process. The measured results demonstrate that the N-well/P-substrate diode without salicide and with the 2D metal-grating structures can serve as the high speed RGB color active pixel sensor for real-time vision chips well.