Y. Eno, K. Masumo, M. Kunigita, M. Akatsuka, M. Yuki
{"title":"用于LCD像素寻址的低漏电流多晶硅tft","authors":"Y. Eno, K. Masumo, M. Kunigita, M. Akatsuka, M. Yuki","doi":"10.1109/DISPL.1991.167470","DOIUrl":null,"url":null,"abstract":"The leakage current characteristics of low-temperature polysilicon TFTs (thin-film transistors) below 450 degrees C have been investigated. It was confirmed that the laser-induced crystallized polysilicon with temperature below 450 degrees C has good physical properties and device characteristics in TFT, equal to those of polysilicon with a process temperature of around 600 degrees C. Reduction of leakage current at higher signal voltage could be achieved by the optimization of the geometrical structure with the laser-induced crystallized polysilicon TFT. The low leakage current characteristics at the higher signal voltage may enlarge the applicable field in the higher-performance display. For example, these improved characteristics make it possible to apply higher voltage for addressing pixels of normally white TN and LC (liquid crystal) polymer composite mode.<<ETX>>","PeriodicalId":399708,"journal":{"name":"Conference Record of the 1991 International Display Research Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Low-leakage current polysilicon TFTs for LCD pixel addressing\",\"authors\":\"Y. Eno, K. Masumo, M. Kunigita, M. Akatsuka, M. Yuki\",\"doi\":\"10.1109/DISPL.1991.167470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The leakage current characteristics of low-temperature polysilicon TFTs (thin-film transistors) below 450 degrees C have been investigated. It was confirmed that the laser-induced crystallized polysilicon with temperature below 450 degrees C has good physical properties and device characteristics in TFT, equal to those of polysilicon with a process temperature of around 600 degrees C. Reduction of leakage current at higher signal voltage could be achieved by the optimization of the geometrical structure with the laser-induced crystallized polysilicon TFT. The low leakage current characteristics at the higher signal voltage may enlarge the applicable field in the higher-performance display. For example, these improved characteristics make it possible to apply higher voltage for addressing pixels of normally white TN and LC (liquid crystal) polymer composite mode.<<ETX>>\",\"PeriodicalId\":399708,\"journal\":{\"name\":\"Conference Record of the 1991 International Display Research Conference\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1991 International Display Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DISPL.1991.167470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 International Display Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DISPL.1991.167470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-leakage current polysilicon TFTs for LCD pixel addressing
The leakage current characteristics of low-temperature polysilicon TFTs (thin-film transistors) below 450 degrees C have been investigated. It was confirmed that the laser-induced crystallized polysilicon with temperature below 450 degrees C has good physical properties and device characteristics in TFT, equal to those of polysilicon with a process temperature of around 600 degrees C. Reduction of leakage current at higher signal voltage could be achieved by the optimization of the geometrical structure with the laser-induced crystallized polysilicon TFT. The low leakage current characteristics at the higher signal voltage may enlarge the applicable field in the higher-performance display. For example, these improved characteristics make it possible to apply higher voltage for addressing pixels of normally white TN and LC (liquid crystal) polymer composite mode.<>
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